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| e PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.0 dB Min. at 8 Watts Gold Metallization Silicon Nitride Passivated Typical Gain & Return Loss vs. Frequency 10 8 Gain (dB) (as measured in a broadband circuit) VCC = 22 V Pin = 2.0 W 0 Return Loss (dB) -3 -6 -9 Gain (dB) 6 4 2 Return Loss (dB) 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2015 6 LOT COD E -12 -15 Frequency (GHz) Package 20209 Maximum Ratings Parameter Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCBO VEBO IC PD Value 50 4.0 2.0 52 0.29 -40 to +150 3.4 Unit Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20156 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CES V(BR)EBO hFE Min 50 3.5 -- Typ -- 5 -- Max -- -- 100 Units Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz) Collector Efficiency (VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz) Load Mismatch Tolerance (VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz --all phase angles at frequency of test) Symbol Gpe C Min 6.0 40 -- Typ -- 50 -- Max -- -- 5:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 22 Vdc, Pout = 20 W) Z Source Z Load Frequency MHz 1350 1500 1700 1850 R 13.8 11.2 10.7 20.0 Z Source jX -14.0 -12.8 -8.4 -9.3 R 4.2 5.6 6.0 4.2 Z Load jX 0.0 0.5 -1.5 -2.1 2 e Typical Performance Gain & Efficiency vs. Power Out 10 8 6 60 50 40 30 4 20 2 0 0 2 4 6 8 10 12 14 16 PTB 20156 VCC = 28 V f = 1.85 GHz 10 0 Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20156 Uen Rev. C 09-28-98 3 Efficiency (%) Gain (dB) |
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